01/99
B-53
J176, J177
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
td
(on)
t
r
td
(off)
t
f
C
gd
C
gs
C
gd
+ C
gs
r
ds(on)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
1
J176
Min
30
1
4
–1
Max
250
Typ
5.5
5.5
32
Max
J177
Min
30
1
0.8
2.25
–1
Max
300
Typ
5.5
5.5
32
pF
pF
pF
Ω
Max
Unit
V
nA
V
mA
nA
Process PJ99
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 20V, V
DS
= ØV
V
DS
= – 15V, I
D
= – 10 nA
V
DS
= – 15V, V
GS
= ØV
V
DS
= – 15V, V
GS
= 10V
–2
– 35 – 1.5 – 20
V
GS
= Ø, V
DS
< = 0.1V
f = 1 kHz
V
DS
= ØV, V
GS
= 10V
V
DS
= ØV, V
GS
= 10V
V
DS
= V
GS
= ØV
f = 1 MHz
f = 1 MHz
f = 1 MHz
15
20
15
20
20
25
20
25
ns
ns
ns
ns
V
DD
V
GS(OFF)
R
L
V
GS(ON)
J176
–6
6
5.6 k
Ø
J177
–6
3
10 k
Ø
V
V
Ω
V
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ176, SMPJ177
Pin Configuration
1 Drain, 2 Gate, 3 Source
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
