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SMPJ174 参数 Datasheet PDF下载

SMPJ174图片预览
型号: SMPJ174
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 1 页 / 96 K
品牌: INTERFET [ INTERFET CORPORATION ]
   
B-52
01/99
J174, J175
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
td
(on)
t
r
td
(off)
t
f
C
gd
C
gs
C
gd
+ C
gs
r
ds(on)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
5
J174
Min
30
1
10
–1
Max
85
Typ
5.5
5.5
32
3
Max
J175
Min
30
1
6
– 70
–1
Max
85
Typ
5.5
5.5
32
pF
pF
pF
Max
Unit
V
nA
V
mA
nA
Process PJ99
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 20V, V
DS
V
DS
= – 15V, I
D
= – 10 nA
V
DS
= – 15V, V
GS
= ØV
V
DS
= – 15V, V
GS
= 10V
– 20 – 125 – 7
V
GS
= Ø, V
DS
< = 0.1V
f = 1 kHz
V
DS
= ØV, V
GS
= 10V
V
DS
= ØV, V
GS
= 10V
V
DS
= V
GS
= ØV
f = 1 MHz
f = 1 MHz
f = 1 MHz
2
5
5
10
5
10
10
20
ns
ns
ns
ns
V
DD
V
GS(OFF)
R
L
V
GS(ON)
J174
– 10
12
560
Ø
J175
–6
8
1.2 k
Ø
V
V
V
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ174, SMPJ175
Pin Configuration
1 Drain, 2 Gate, 3 Source
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com