F-30
01/99
PJ99 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ Analog Switch
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
S-D
G
Die Size = 0.021" X 0.021"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the PJ99 Process.
Datasheet
2N3993, 2N3993A
2N3994, 2N3994A
2N5114, 2N5115
2N5116
2SJ44
IFN5114, IFN5115
IFN5116
Datasheet
IFP44
J174, J175
J176, J177
P1086, P1087
VCR3P
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
r
ds(on)
g
fs
C
iss
C
iss
e
N
¯
t
d(on)
t
r
t
d(off)
t
f
75
15
18
4.5
8
5
10
6
5
Ω
mS
pF
pF
ns
ns
ns
ns
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
–5
1
Min
30
Typ
40
0.5
1
– 60
8
Max
Unit
V
nA
mA
V
PJ99 Process
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 20V, V
DS
= ØV
V
DS
= – 15V, V
GS
= ØV
V
DS
= – 15V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= ØV
V
DS
= – 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= ØV, V
GS
= 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= – 10V, V
GS
= ØV
V
DD
= – 10V, I
D(ON)
= – 15 mA
R
L
= 580
Ω,
V
GS(ON)
= ØV
V
GS(OFF)
= 12V
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
