F-26
01/99
NJ72 Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
S-D
G
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ72 Process.
Datasheet
IFN5564, IFN5565
IFN5566
J308, J309
J308, J309
J310
Datasheet
U308, U309
U430, U431
VCR2N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
g
fs
r
ds(on)
C
iss
C
rss
22
40
6.5
2.5
mS
Ω
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
–1
Min
– 25
Typ
– 40
– 10
– 100
90
– 5.5
Max
Unit
V
pA
mA
V
NJ72 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
