F-24
01/99
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S
Die Size = 0.032" X 0.032"
All Bond Pads = 0.004", Dia.
Substrate is also Gate.
Devices in this Databook based on the NJ42 Process.
Datasheet
2N6449, 2N6450
IFN6449, IFN6450
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
800
6
2
10
10
5
µS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
2
–2
Min
– 300
Typ
– 400
–1
– 10
10
– 12
Max
Unit
V
nA
mA
V
NJ42 Process
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= – 150V, V
DS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, I
D
= 1 nA
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 15V, V
GS
= ØV
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FAX
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