F-22
01/99
NJ36D Process
Silicon Junction Field-Effect Transistor
¥ Monolithic Dual Construction
¥ High Frequency Amplifier
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Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S
D
G
Die Size = 0.026" X 0.026"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
G
Devices in this Databook based on the NJ36D Process.
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Differential Gate Source Voltage
r
ds(on)
g
fs
C
iss
C
rss
e
N
¯
V
GS1
– V
GS2
NJ36D Process
Min
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
1
– 0.5
– 25
Typ
– 35
0.05
0.1
40
–8
Max
Unit
V
nA
mA
V
Test Conditions
I
G
= – 1 mA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
90
8.5
5.5
1.5
5
5
20
250
7.0
3
100
Ω
mS
pF
pF
mV
I
D
= Ø mA, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DG
= 15V, I
D
= 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 15V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
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