F-48
01/99
NJ3600L Process
Silicon Junction Field-Effect Transistor
¥ Large Capacitance Detector Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
S-D
S-D
S-D
G
Device in this Databook based on the NJ3600L Process.
Datasheet
IF3601
IF3602
G D-S
Die Size = 0.074" X 0.074"
All Bond Pads
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
r
ds(on)
g
fs
C
iss
C
rss
e
N
¯
1
750
650
80
0.35
4
Ω
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
50
– 0.5
Min
– 15
Typ
– 22
100
1000
1000
–3
Max
Unit
V
pA
mA
V
NJ3600L Process
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 30 Hz
nV/√HZ V
DG
= 3V, I
D
= 5 mA
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
