F-8
01/99
NJ26 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the NJ26A Process.
Datasheet
2N4416, 2N4416A
2N5484, 2N5485
2N5486
J304, J305
VCR11N
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
6
4.3
1
4
5.0
1.5
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
2
–1
Min
– 30
Typ
– 40
– 10
– 100
22
–5
Max
Unit
V
pA
mA
V
NJ26 Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= 10V, I
D
= 5 mA
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FAX
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