F-4
01/99
NJ14AL Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
¥ Rf AMP to 1.0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
Devices in this Databook based on the NJ14AL Process.
Datasheet
IF140, IF140A
IF142
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward Transconductance
NJ14AL Process
Min
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.5
0.5
10
– 15
Typ
– 22
– 2.0
– 100
–7
20
Max
Unit
V
pA
V
mA
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= 10V, I
D
= 1 nA
V
DS
= 10V, V
GS
= ØV
g
fs
C
iss
e
N
¯
5.5
2.3
0.5
4
mS
pF
pF
V
DS
= 10V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
Common Source Input Capacitance
Equivalent Noise Voltage
Common Source Reverse Transfer Capacitance
C
rss
nV/√HZ V
DS
= 10V, I
D
= 5 mA
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FAX
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