D-6
01/99
IFN147
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK147
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
g
fs
C
iss
C
rss
NF
30
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 0.3
5
Min
– 40
IFN147
Typ
Max
–1
–1
– 1.2
30
Unit
V
nA
µA
V
mA
Process NJ450
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 10V, I
D
= 1 µA
V
DS
= 10V, V
GS
= ØV
T
A
= 150°C
40
75
15
1
10
mS
pF
pF
dB
dB
V
DS
= 10V, V
GS
= ØV
I
DSS
= 5 mA
V
DS
= 10V, V
GS
= ØV
V
DS
= 10V, I
D
= Ø
V
DS
= 10V, I
D
= 5 mA
R
G
= 100Ω
f = 1 kHz
f = 1 kHz
f = 1 Hz
f = 1 kHz
f = 100 Hz
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
INTERFET [ INTERFET CORPORATION ]
