Preliminary Data Sheet PD-20610 11/98
HF51A060ACE
Hexfred Die in Wafer Form
600 V
Size 51
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
FM
BV
R
I
RM
Description
Forward Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Guaranteed (Min/Max)
1.2V Max.
600V Min.
25µA Max.
Test Conditions
T
J
= 25°C, I
F
= 10.0A
T
J
= 25°C, I
R
= 200µA
T
J
= 25°C, V
R
= 600V
Mechanical Data
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.340" x 0.195"
125mm, with std. < 100 > flat
.015" ± .003"
01-5312
100 Microns
0.25mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
Reference Standard IR packaged part ( for design ) : IRG4PSC71KD
Die Outline
NOTES :
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. DIMENSIONAL TOLERANCES :
BONDING PADS : < 0.635 TOLERANCE = ± 0.013
WIDTH
< (.0250) TOLERANCE = ± (.0005)
&
> 0.635 TOLERANCE = ± 0.025
LENGTH
> (.0250) TOLERANCE = ± (.0010)
OVERALLDIE
< 1.270 TOLRANCE = ± 0.102
WIDTH
< (.050) TOLERANCE = ± (.004)
&
> 1.270 TOLERANCE = ± 0.203
LENGTH
> (.050) TOLERANCE = ± (.008)
INTERFET [ INTERFET CORPORATION ]
