01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at T
A
=25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to +200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current (Pulsed)
2N6550
Min
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
10
– 0.3
100
– 20
–3
– 0.1
250
–3
Typ
Max
Unit
V
nA
µA
mA
V
Process NJ450L
Test Conditions
I
G
= 10 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
V
GS
= – 10V, V
DS
= ØV
V
DS
= 10V, V
GS
= Ø V
V
DS
= 10V, I
D
= 0.1 mA
T
A
= 85°C
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
g
fs
|Y
os
|
C
iss
25
30
10
1.4
6
150
150
35
20
2
10
mS
µS
pF
pF
nV/√Hz
nV/√Hz
µVrms
pA/√Hz
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, I
D
= 10 mA
V
DS
= 10V, V
DS
= ØV
V
DS
= 5V, I
D
= 10 mA
V
DS
= 5V, I
D
= 10 mA
V
DS
= 5V, I
D
= 10 mA
R
S
< 100 KΩ
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
Common Source Reverse Transfer Capacitance
C
rss
Equivalent Short Circuit
Input Noise Voltage
e
N
¯
e
N
Total
¯
0.4
0.1
0.6
Equivalent Open Circuit Input Noise Current
¯
N
i
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
INTERFET [ INTERFET CORPORATION ]
