B-26
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
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Amplifiers
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Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
2N6453
2N6454
– 20 V
– 25 V
– 20 V
– 25 V
10 mA
10 mA
360 mW
360 mW
2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V
(BR)GSS
2N6453
Min
– 20
– 0.1
Max
2N6454
Min
– 25
– 0.5
Max
Unit
V
nA
nA
µA
–1
µA
V
mA
Process NJ132L
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 10V, V
DS
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 10V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 10V, I
D
= 0.5 nA
V
DS
= 10V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
Gate Reverse Current
I
GSS
– 0.2
– 0.75 – 5 – 0.75 – 5
15
50
15
50
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transmittance
Common Source
Output Conductance
Common Source
Input Capacitance
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V
GS(OFF)
I
DSS
| Y
fs
|
| Y
os
|
C
iss
C
rss
e
N
¯
NF
mS
20
40
100
25
5
5
3
1.5
20
40
100
25
5
8
2.5
mS
µS
µS
pF
pF
pF
pF
nV/√Hz
dB
10 nV/√Hz
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 15 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
V
DS
= 10V, I
D
= 5 mA
R
G
= 10 kΩ
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 10 kHz
f = 1 kHz
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com