01/99
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
¥ VHF Amplifiers
¥ Small Signal Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
GSS
2N3821
Min
– 50
– 0.1
– 0.1
– 0.5
–2
Max
2N3822
Min
– 50
– 0.1
– 0.1
–1
–4
–6
2
10
Max
Unit
V
nA
µA
V
V
V
V
mA
nA
µA
Process NJ32
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, I
D
= 50 µA
V
DS
= 15V, I
D
= 200 µA
V
DS
= 15V, I
D
= 400 µA
V
DS
= 15V, I
D
= 0.5 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= – 8V
V
DS
= 15V, V
GS
= – 8V
T
A
= 150°C
T
A
= 150°C
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source
Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V
GS
V
GS(OFF)
I
DSS
I
D(OFF)
0.5
–4
2.5
r
ds(on)
g
fs
| Y
fs
|
g
os
C
iss
C
rss
e
N
¯
NF
1500 4500 3000 6500
1500
10
6
2
200
5
3000
20
6
2
Ω
µS
µS
µS
pF
pF
V
GS
= ØV, I
D
= Ø V
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ
f = 1 kHz
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
200 nV/√Hz
5
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
INTERFET [ INTERFET CORPORATION ]
