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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
Appendix E Program and Erase Flowcharts  
Figure 10. Program Flowchart  
Start  
Bus Operation  
Command  
Comments  
Write  
Write  
Program Setup  
Program  
Data = 40H  
Write 40H  
Data = Data to Program  
Addr = Location to Program  
Program Address/Data  
Read Status Register  
Status Register Data Toggle  
CE# or OE# to Update Status  
Register Data  
Read  
Check SR.7  
1 = WSM Ready  
0 = WSM Busy  
Standby  
Repeat for subsequent programming operations.  
No  
SR.7 = 1?  
Yes  
SR Full Status Check can be done after each program or after a sequence of  
program operations.  
Write FFH after the last program operation to reset device to read array mode.  
Full Status  
Check if Desired  
Program Complete  
FULL STATUS CHECK PROCEDURE  
Read Status Register  
Data (See Above)  
Bus Operation  
Standby  
Command  
Comments  
Check SR.3  
1
1 = VPP Low Detect  
SR.3 =  
VPP Range Error  
Check SR.4  
1 = VPP Program Error  
Standby  
0
SR.4 =  
0
Check SR.1  
1
1
1 = Attempted Program to  
Locked Block - Program  
Aborted  
Standby  
Programming Error  
SR.3 MUST be cleared, if set during a program attempt, before further  
attempts are allowed by the Write State Machine.  
Attempted Program to  
Locked Block - Aborted  
SR.1 =  
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,  
in cases where multiple bytes are programmed before full status is checked.  
0
If an error is detected, clear the status register before attempting retry or other  
error recovery.  
Program Successful  
0580_E1  
48  
3UHOLPLQDU\  
 复制成功!