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TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Contents  
Revision History  
Date of  
Version  
Revision  
Description  
05/12/98  
-001  
Original version  
48-Lead TSOP package diagram change  
µBGA package diagrams change  
32-Mbit ordering information change (Section 6)  
CFI Query Structure Output Table Change (Table C2)  
CFI Primary-Vendor Specific Extended Query Table Change for Optional  
Features and Command Support change (Table C8)  
Protection Register Address Change  
07/21/98  
-002  
I
test conditions clarification (Section 4.3)  
PPD  
µBGA package top side mark information clarification (Section 6)  
Byte-Wide Protection Register Address change  
V
V
Specification change (Section 4.3)  
Maximum Specification change (Section 4.3)  
test conditions clarification (Section 4.3)  
IH  
IL  
10/03/98  
12/04/98  
-003  
-004  
I
CCS  
Added Command Sequence Error Note (Table 7)  
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash  
Memory Family.  
Added t  
/t  
and t  
(Section 4.6)  
BHWH BHEH  
QVBL  
Programming the Protection Register clarification (Section 3.4.2)  
12/31/98  
02/24/99  
-005  
-006  
Removed all references to x8 configurations  
Removed reference to 40-Lead TSOP from front page  
Added Easy BGA package (Section 1.2)  
Removed 1.8 V I/O references  
Locking Operations Flowchart changed (Appendix B)  
06/10/99  
-007  
Added t  
(Section 4.6)  
WHGL  
CFI Primary Vendor-Specific Extended Query changed (Appendix C)  
Max I changed to 25 µA  
CCD  
03/20/00  
04/24/00  
-008  
-009  
Table 10, added note indicating V Max = 3.3 V for 32-Mbit device  
CC  
Added specifications for 0.18 micron product offerings throughout document  
Added 64-Mbit density  
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the  
faster product offering.  
10/12/00  
-010  
Changed VccMax=3.3V reference to indicate that the affected product is the  
0.25µm 32Mbit device.  
Minor text edits throughout document.  
Added 1.8v I/O operation documentation where applicable  
Added TSOP PCN ‘Pin-1’ indicator information  
Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’  
Added ‘Vssq’ to Pin Descriptions Information  
7/20/01  
-011  
Removed 0.4 µm references in DC characteristics table  
Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA  
Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords  
Minor text edits throughout document  
10/02/01  
2/05/02  
-012  
-013  
Added specifications for 0.13 micron product offerings throughout document  
Corrected Iccw / Ippw / Icces /Ippes values.  
Added mechanicals for 16Mb and 64Mb  
Minor text edits throughout document.  
Datasheet  
5