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RC28F160C3TD70 参数 Datasheet PDF下载

RC28F160C3TD70图片预览
型号: RC28F160C3TD70
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存内存集成电路
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Intel Advanced+ Boot Block Flash Memory (C3)  
Figure 18. Protection Register Programming Flowchart  
PROTECTION REGISTER PROGRAMMING PROCEDURE  
Bus  
Operation  
Start  
Command  
Comments  
Program Data = 0xC0  
PR Setup Addr = First Location to Program  
Write  
Write  
Read  
Write 0xC0,  
PR Address  
(Program Setup)  
(Confirm Data)  
Protection Data = Data to Program  
Program Addr = Location to Program  
Write PR  
Address & Data  
Status Register Data. Toggle CE# or  
None  
OE# to Update Status Register Data  
Read Status  
Register  
Check SR[7]:  
1 = WSM Ready  
0 = WSM Busy  
Idle  
None  
Program Protection Register operation addresses must be  
within the Protection Register address space. Addresses  
outside this space will return an error.  
0
SR[7] =  
1
Repeat for subsequent programming operations.  
Full Status  
Check  
(if desired)  
Full Status Register check can be done after each program, or  
after a sequence of program operations.  
Write 0xFF after the last operation to set Read Array state.  
Program  
Complete  
FULL STATUS CHECK PROCEDURE  
Read Status  
Register Data  
Bus  
Operation  
Command  
Comments  
Check SR[1], SR[3], SR[4]:  
0,1,1 = VPP Range Error  
Idle  
Idle  
Idle  
None  
1
SR[3], SR[4] =  
0
VPP Range Error  
Program Error  
Check SR[1], SR[3], SR[4]:  
0,0,1 = Programming Error  
None  
None  
Check SR[1], SR[3], SR[4]:  
1,0,1 = Block locked; operation aborted  
1
1
SR[3], SR[4] =  
SR[3] must be cleared before the Write State Machine will  
allow further program attempts.  
0
Only the Clear Staus Register command clears SR[1, 3, 4].  
Register Locked;  
Program Aborted  
If an error is detected, clear the Status register before  
attempting a program retry or other error recovery.  
SR[3], SR[4] =  
0
Program  
Successful  
Datasheet  
57  
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