£
Intel Advanced+ Boot Block Flash Memory (C3)
Figure 9. Write Operations Waveform
W5
W8
W6
Address [A]
CE# [E]
W3
W2
W9
WE# [W]
OE# [G]
W4
W7
Data [D/Q]
W1
RP# [P]
W10
Vpp [V]
8.3
Erase and Program Timings
Table 21. Erase and Program Timings
V
1.65 V–3.6 V
11.4 V–12.6 V
PP
Symbol
Parameter
Unit
Note
Typ
Max
Typ
Max
4-KW Parameter Block
Word Program Time
tBWPB
tBWMB
1, 2, 3
0.10
0.30
0.03
0.12
s
s
32-KW Main Block
Word Program Time
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
0.8
12
22
0.5
1
2.4
200
200
4
0.24
8
1
185
185
4
Word Program Time for 0.13
and 0.18 Micron Product
µs
µs
s
t
t
WHQV1 / tEHQV1
Word Program Time for 0.25
Micron Product
8
4-KW Parameter Block
Erase Time
WHQV2 / tEHQV2
WHQV3 / tEHQV3
WHRH1 / tEHRH1
0.4
0.6
32-KW Main Block
Erase Time
t
t
5
5
s
Program Suspend Latency
Erase Suspend Latency
1,3
1,3
5
5
10
20
5
5
10
20
µs
µs
tWHRH2 / tEHRH2
NOTES:
1. Typical values measured at TA= +25 °C and nominal voltages.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
Datasheet
47
INTEL [ INTEL ]
