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NZ48F4000L0ZBQ0 参数 Datasheet PDF下载

NZ48F4000L0ZBQ0图片预览
型号: NZ48F4000L0ZBQ0
PDF下载: 下载PDF文件 查看货源
内容描述: 1.8 ?伏?英特尔? StrataFlash㈢ ?无线存储器?与? 3.0伏? I / O ? ( L30 ) [1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)]
分类和应用: 存储无线
文件页数/大小: 100 页 / 1405 K
品牌: INTEL [ INTEL ]
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28F640L30, 28F128L30, 28F256L30  
C.3  
CFI Query Identification String  
The Identification String provides verification that the component supports the Common Flash  
Interface specification. It also indicates the specification version and supported vendor-specified  
command set(s).  
Table 21. CFI Identification  
Hex  
Code  
--51  
--52  
--59  
--03  
--00  
--0A  
--01  
--00  
--00  
--00  
Offset Length  
Description  
Query-unique ASCII string “QRY“  
Add.  
10:  
11:  
12:  
13:  
14:  
15:  
16:  
17:  
18:  
19:  
Value  
"Q"  
"R"  
3
10h  
"Y"  
2
2
2
2
Primary vendor command set and control interface ID code.  
16-bit ID code for vendor-specified algorithms  
Extended Query Table primary algorithm address  
13h  
15h  
17h  
19h  
Alternate vendor command set and control interface ID code.  
0000h means no second vendor-specified algorithm exists  
Secondary algorithm Extended Query Table address.  
0000h means none exists  
1A: --00  
Table 22. System Interface Information  
Hex  
Offset  
Length  
Description  
Add. Code Value  
1Bh  
1
V
V
V
V
CC logic supply minimum program/erase voltage  
1B:  
1C:  
1D:  
1E:  
--17  
--20  
--85  
--95  
1.7V  
2.0V  
8.5V  
9.5V  
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
CC logic supply maximum program/erase voltage  
1Ch  
1Dh  
1Eh  
1
1
1
bits 0–3 BCD 100 mV  
bits 4–7 BCD volts  
PP [programming] supply minimum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
PP [programming] supply maximum program/erase voltage  
bits 0–3 BCD 100 mV  
bits 4–7 HEX volts  
“n” such that typical single word program time-out = 2n µ-sec  
“n” such that typical max. buffer write time-out = 2n µ-sec  
“n” such that typical block erase time-out = 2n m-sec  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
1
1
1
1
1
1
1
1
1F:  
20:  
21:  
22:  
23:  
24:  
25:  
26:  
--08 256µs  
--09 512µs  
--0A  
--00  
1s  
NA  
“n” such that typical full chip erase time-out = 2n m-sec  
“n” such that maximum word program time-out = 2n times typical  
“n” such that maximum buffer write time-out = 2n times typical  
“n” such that maximum block erase time-out = 2n times typical  
“n” such that maximum chip erase time-out = 2n times typical  
--01 512µs  
--01 1024µs  
--02  
--00  
4s  
NA  
Datasheet  
85  
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