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EPM1270GT144I4N 参数 Datasheet PDF下载

EPM1270GT144I4N图片预览
型号: EPM1270GT144I4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 8.1ns, 980-Cell, CMOS, PQFP144, 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, TQFP-144]
分类和应用: LTE输入元件可编程逻辑
文件页数/大小: 86 页 / 1210 K
品牌: INTEL [ INTEL ]
 浏览型号EPM1270GT144I4N的Datasheet PDF文件第70页浏览型号EPM1270GT144I4N的Datasheet PDF文件第71页浏览型号EPM1270GT144I4N的Datasheet PDF文件第72页浏览型号EPM1270GT144I4N的Datasheet PDF文件第73页浏览型号EPM1270GT144I4N的Datasheet PDF文件第75页浏览型号EPM1270GT144I4N的Datasheet PDF文件第76页浏览型号EPM1270GT144I4N的Datasheet PDF文件第77页浏览型号EPM1270GT144I4N的Datasheet PDF文件第78页  
5–16  
Chapter 5: DC and Switching Characteristics  
Timing Model and Specifications  
Figure 5–3 through Figure 5–5 show the read, program, and erase waveforms for  
UFM block timing parameters shown in Table 5–21.  
Figure 5–3. UFM Read Waveforms  
ARShft  
tAH  
9 Address Bits  
tACLK  
tASU  
ARClk  
ARDin  
DRShft  
DRClk  
tADH  
tADS  
16 Data Bits  
tDSH  
tDCLK  
tDSS  
tDCO  
DRDin  
DRDout  
OSC_ENA  
Program  
Erase  
Busy  
Figure 5–4. UFM Program Waveforms  
9 Address Bits  
tACLK  
ARShft  
ARClk  
tAH  
tADH  
tASU  
ARDin  
DRShft  
DRClk  
DRDin  
DRDout  
tADS  
16 Data Bits  
tDCLK  
tDSH  
tDSS  
tDDH  
tDDS  
tOSCH  
tOSCS  
OSC_ENA  
Program  
tPB  
Erase  
Busy  
tBP  
tPPMX  
MAX II Device Handbook  
© Novermber 2008 Altera Corporation  
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