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EPM1270GF256A4N 参数 Datasheet PDF下载

EPM1270GF256A4N图片预览
型号: EPM1270GF256A4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 8.1ns, 980-Cell, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256]
分类和应用: LTE输入元件可编程逻辑
文件页数/大小: 86 页 / 1210 K
品牌: INTEL [ INTEL ]
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Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices  
4–7  
Power-On Reset Circuitry  
Figure 4–5. Power-Up Characteristics for MAX II, MAX IIG, and MAX IIZ Devices (Note 1), (2)  
MAX II Device  
V
3.3 V  
2.5 V  
CCINT  
Approximate Voltage  
for SRAM Download Start  
Device Resets  
the SRAM and  
Tri-States I/O Pins  
1.7 V  
1.4 V  
t
CONFIG  
0 V  
User Mode  
Operation  
Tri-State  
Tri-State  
Tri-State  
Tri-State  
MAX IIG Device  
V
CCINT  
3.3 V  
Approximate Voltage  
for SRAM Download Start  
Device Resets  
the SRAM and  
Tri-States I/O Pins  
1.8 V  
1.55 V  
1.4 V  
t
CONFIG  
0 V  
User Mode  
Operation  
Tri-State  
MAX IIZ Device  
V
CCINT  
3.3 V  
V
must be powered down  
to 0 V if the V  
dips below this level  
CCINT  
Approximate Voltage  
for SRAM Download Start  
CCINT  
1.8 V  
1.55 V  
1.4 V  
t
minimum 10 µs  
t
CONFIG  
CONFIG  
0 V  
User Mode  
Operation  
User Mode  
Operation  
Tri-State  
Notes to Figure 4–5:  
(1) Time scale is relative.  
(2) Figure 4–5 assumes all VCCIO banks power up simultaneously with the VCCINT profile shown. If not, tCONFIG stretches out until all VCCIO banks are powered.  
1
After SRAM configuration, all registers in the device are cleared and released into  
user function before I/O tri-states are released. To release clears after tri-states are  
released, use the DEV_CLRnpin option. To hold the tri-states beyond the power-up  
configuration time, use the DEV_OE pin option.  
© October 2008 Altera Corporation  
MAX II Device Handbook