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EPM570F256C5N 参数 Datasheet PDF下载

EPM570F256C5N图片预览
型号: EPM570F256C5N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 8.7ns, 440-Cell, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256]
分类和应用: 输入元件可编程逻辑
文件页数/大小: 88 页 / 982 K
品牌: INTEL [ INTEL ]
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2–18  
Chapter 2: MAX II Architecture  
User Flash Memory Block  
Figure 2–14. Global Clock Network (Note 1)  
LAB Column  
clock[3..0]  
I/O Block Region  
4
4
4
4
4
4
4
4
LAB Column  
clock[3..0]  
I/O Block Region  
I/O Block Region  
UFM Block (2)  
CFM Block  
Notes to Figure 2–14:  
(1) LAB column clocks in I/O block regions provide high fan-out output enable signals.  
(2) LAB column clocks drive to the UFM block.  
User Flash Memory Block  
MAX II devices feature a single UFM block, which can be used like a serial EEPROM  
for storing non-volatile information up to 8,192 bits. The UFM block connects to the  
logic array through the MultiTrack interconnect, allowing any LE to interface to the  
UFM block. Figure 2–15 shows the UFM block and interface signals. The logic array is  
used to create customer interface or protocol logic to interface the UFM block data  
outside of the device. The UFM block offers the following features:  
Non-volatile storage up to 16-bit wide and 8,192 total bits  
Two sectors for partitioned sector erase  
Built-in internal oscillator that optionally drives logic array  
Program, erase, and busy signals  
MAX II Device Handbook  
© October 2008 Altera Corporation