Chapter 5: DC and Switching Characteristics
5–3
Operating Conditions
Programming/Erasure Specifications
Table 5–3 shows the MAX II device family programming/erasure specifications.
Table 5–3. MAX II Device Programming/Erasure Specifications
Parameter
Erase and reprogram cycles
Note to Table 5–3:
Minimum
Typical
Maximum
Unit
—
—
100 (1)
Cycles
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.
DC Electrical Characteristics
Table 5–4 shows the MAX II device family DC electrical characteristics.
Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum Typical Maximum
Unit
II
Input pin leakage
current
VI = VCCIO max to 0 V (2)
–10
—
10
µA
IOZ
Tri-stated I/O pin
leakage current
VO = VCCIOmax to 0 V (2)
–10
—
10
µA
ICCSTANDBY
VCCINT supply current
(standby) (3)
MAX II devices
—
—
—
12
2
—
—
90
mA
mA
µA
MAX IIG devices
EPM240Z (Commercial
25
grade) (4)
EPM240Z (Industrial
grade) (5)
—
—
—
25
27
27
139
96
µA
µA
µA
EPM570Z (Commercial
grade) (4)
EPM570Z (Industrial
152
grade) (5)
VSCHMITT (6)
Hysteresis for Schmitt VCCIO = 3.3 V
—
—
—
—
400
190
55
—
—
—
—
mV
mV
mA
mA
trigger input (7)
VCCIO = 2.5 V
ICCPOWERUP
VCCINT supply current
MAX II devices
during power-up (8)
MAX IIG and MAX IIZ
devices
40
RPULLUP
Value of I/O pin pull-up
resistor during user
mode and in-system
programming
V
CCIO = 3.3 V (9)
5
—
—
—
—
25
40
60
95
k
k
k
k
VCCIO = 2.5 V (9)
VCCIO = 1.8 V (9)
VCCIO = 1.5 V (9)
10
25
45
© August 2009 Altera Corporation
MAX II Device Handbook
INTEL [ INTEL ]
