2–2
Chapter 2: MAX II Architecture
Functional Description
shows a functional block diagram of the MAX II device.
Figure 2–1.
MAX II Device Block Diagram
IOE
IOE
IOE
IOE
IOE
IOE
IOE
Logic
Element
Logic
Element
Logic
Element
IOE
Logic
Element
Logic
Element
Logic
Element
Logic Array
BLock (LAB)
MultiTrack
Interconnect
IOE
Logic
Element
Logic
Element
Logic
Element
IOE
Logic
Element
Logic
Element
Logic
Element
MultiTrack
Interconnect
Each MAX II device contains a flash memory block within its floorplan. On the
EPM240 device, this block is located on the left side of the device. On the EPM570,
EPM1270, and EPM2210 devices, the flash memory block is located on the bottom-left
area of the device. The majority of this flash memory storage is partitioned as the
dedicated configuration flash memory (CFM) block. The CFM block provides the non-
volatile storage for all of the SRAM configuration information. The CFM
automatically downloads and configures the logic and I/O at power-up, providing
instant-on operation.
f
For more information about configuration upon power-up, refer to the
chapter in the
MAX II Device Handbook.
A portion of the flash memory within the MAX II device is partitioned into a small
block for user data. This user flash memory (UFM) block provides 8,192 bits of
general-purpose user storage. The UFM provides programmable port connections to
the logic array for reading and writing. There are three LAB rows adjacent to this
block, with column numbers varying by device.
shows the number of LAB rows and columns in each device, as well as the
number of LAB rows and columns adjacent to the flash memory area in the EPM570,
EPM1270, and EPM2210 devices. The long LAB rows are full LAB rows that extend
from one side of row I/O blocks to the other. The short LAB rows are adjacent to the
UFM block; their length is shown as width in LAB columns.
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