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EP2S60F484I4N 参数 Datasheet PDF下载

EP2S60F484I4N图片预览
型号: EP2S60F484I4N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 3022 CLBs, 717MHz, 60440-Cell, CMOS, PBGA484, 23 X 23 MM, 1 MM PITCH, LEAD FREE, FBGA-484]
分类和应用: 时钟可编程逻辑
文件页数/大小: 248 页 / 2983 K
品牌: INTEL [ INTEL ]
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Duty Cycle Distortion  
Table 5–80. Maximum DCD for Non-DDIO Output on Row I/O Pins (Part 2  
of 2) Note (1)  
Maximum DCD for Non-DDIO Output  
Row I/O Output  
Standard  
-3 Devices  
-4 & -5 Devices  
Unit  
1.8 V  
180  
165  
115  
95  
180  
195  
145  
125  
85  
ps  
ps  
ps  
ps  
ps  
ps  
ps  
ps  
1.5-V LVCMOS  
SSTL-2 Class I  
SSTL-2 Class II  
SSTL-18 Class I  
1.8-V HSTL Class I  
1.5-V HSTL Class I  
55  
80  
100  
115  
80  
85  
LVDS/  
55  
HyperTransport  
technology  
Note to Table 5–80:  
(1) The DCD specification is based on a no logic array noise condition.  
Here is an example for calculating the DCD as a percentage for a  
non-DDIO output on a row I/O on a -3 device:  
If the non-DDIO output I/O standard is SSTL-2 Class II, the maximum  
DCD is 95 ps (see Table 5–80). If the clock frequency is 267 MHz, the clock  
period T is:  
T = 1/ f = 1 / 267 MHz = 3.745 ns = 3745 ps  
To calculate the DCD as a percentage:  
(T/2 – DCD) / T = (3745ps/2 – 95ps) / 3745ps = 47.5% (for low  
boundary)  
(T/2 + DCD) / T = (3745ps/2 + 95ps) / 3745ps = 52.5% (for high  
boundary)  
5–80  
Stratix II Device Handbook, Volume 1  
Altera Corporation  
April 2011  
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