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28F640L18 参数 Datasheet PDF下载

28F640L18图片预览
型号: 28F640L18
PDF下载: 下载PDF文件 查看货源
内容描述: 的StrataFlash无线存储器 [StrataFlash Wireless Memory]
分类和应用: 存储无线
文件页数/大小: 106 页 / 1700 K
品牌: INTEL [ INTEL ]
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Intel StrataFlash® Wireless Memory (L18)  
2.0  
Functional Overview  
The Intel StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase  
capability with density upgrades through 256-Mbit. This family of devices provides high  
performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for  
optimum code and data storage.  
Each device density contains one parameter partition and several main partitions. The flash  
memory array is grouped into multiple 8-Mbit or 16-Mbit partitions. By dividing the flash memory  
into partitions, program or erase operations can take place at the same time as read operations.  
Although each partition has write, erase, and burst read capabilities, simultaneous operation is  
limited to write or erase in one partition while other partitions are in read mode. The Intel  
StrataFlash® Wireless Memory (L18) allows burst reads that cross partition boundaries. User  
application code is responsible for ensuring that burst reads do not cross into a partition that is  
programming or erasing.  
Upon initial power up or return from reset, the device defaults to asynchronous page-mode read.  
Configuring the Read Configuration Register enables synchronous burst-mode reads. In  
synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT  
signal provides easy CPU-to-flash memory synchronization.  
In addition to the enhanced architecture and interface, the Intel StrataFlash® Wireless Memory  
(L18) incorporates technology that enables fast factory program and erase operations. Designed for  
low-voltage systems, the Intel StrataFlash® Wireless Memory (L18) supports read operations with  
V
CC at 1.8 volt, and erase and program operations with VPP at 1.8 V or 9.0 V. Buffered Enhanced  
Factory Programming (Buffered EFP) provides the fastest flash array programming performance  
with VPP at 9.0 volt, which increases factory throughput. With VPP at 1.8 V, VCC and VPP can be  
tied together for a simple, ultra-low power design. In addition to voltage flexibility, a dedicated  
V
PP connection provides complete data protection when VPP is less than VPPLK.  
A Command User Interface (CUI) is the interface between the system processor and all internal  
operations of the Intel StrataFlash® Wireless Memory (L18). An internal Write State Machine  
(WSM) automatically executes the algorithms and timings necessary for block erase and program.  
A Status Register indicates erase or program completion and any errors that may have occurred.  
An industry-standard command sequence invokes program and erase automation. Each erase  
operation erases one block. The Erase Suspend feature allows system software to pause an erase  
cycle to read or program data in another block. Program Suspend allows system software to pause  
programming to read other locations. Data is programmed in word increments.  
The Intel StrataFlash® Wireless Memory (L18) offers power savings through Automatic Power  
Savings (APS) mode and standby mode. The device automatically enters APS following read-cycle  
completion. Standby is initiated when the system deselects the device by deasserting CE# or by  
asserting RST#. Combined, these features can significantly reduce power consumption.  
The Intel StrataFlash® Wireless Memory (L18)’s protection register allows unique flash device  
identification that can be used to increase system security. Also, the individual Block Lock feature  
provides zero-latency block locking and unlocking.  
Datasheet  
Intel StrataFlash® Wireless Memory (L18)  
Order Number: 251902, Revision: 009  
April 2005  
11