E
Symbol
RY/BY#
WP#
BYTE#
28F016SA
2.1 Lead Descriptions
(Continued)
Type
OPEN DRAIN
OUTPUT
Name and Function
READY/BUSY:
Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# high
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or block erase is suspended, or the
device is in deep power-down mode. This output is always active (i.e., not
floated to tri-state off when OE# or CE
0
#,CE
1
# are high), except if a
RY/BY# Pin Disable command is issued.
WRITE PROTECT:
Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or block erases. When WP# is high, all blocks
can be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE ENABLE:
BYTE# low places device in x8 mode. All data is then
input or output on DQ
0–7
, and DQ
8–15
float. Address A
0
selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A
0
input buffer. Address A
1
then becomes the lowest order
address.
3.3/5.0 VOLT SELECT:
3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5.0V operation.
NOTES:
Reading the array with 3/5# high in a 5.0V system could damage the
device.
There is a significant delay from 3/5# switching to valid data.
V
PP
V
CC
GND
NC
SUPPLY
SUPPLY
SUPPLY
ERASE/PROGRAM POWER SUPPLY:
For erasing memory array blocks
or writing words/bytes/pages into the flash array.
DEVICE POWER SUPPLY (3.3V ± 10%, 5.0V ± 10%, 5.0V ± 5%):
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
INPUT
INPUT
3/5#
INPUT
9
INTEL [ INTEL CORPORATION ]
