28F008SA
The
Status Register
indicates the status of the
WSM and when the WSM successfully completes
the desired byte write or block erase operation
The
RY BY
output gives an additional indicator of
WSM activity providing capability for both hardware
signal of status (versus software polling) and status
masking (interrupt masking for background erase
for example) Status polling using RY BY mini-
mizes both CPU overhead and system power con-
sumption When low RY BY indicates that the
WSM is performing a block erase or byte write oper-
ation RY BY high indicates that the WSM is ready
for new commands block erase is suspended or the
device is in deep powerdown mode
Maximum access time is
85 ns (t
ACC
)
over the com-
mercial temperature range (0 C to
a
70 C) and over
V
CC
supply voltage range (4 5V to 5 5V and 4 75V to
5 25V)
I
CC
active current
(CMOS Read) is
20 mA
typical 35 mA maximum at 8 MHz
When the CE and RP pins are at V
CC
the
I
CC
CMOS Standby
mode is enabled
A
Deep Powerdown
mode is enabled when the
RP pin is at GND minimizing power consumption
and providing write protection
I
CC
current
in deep
powerdown is
0 20
mA
typical
Reset time of 400 ns
is required from RP switching high until outputs are
valid to read attempts Equivalently the device has a
wake time of 1
ms
from RP high until writes to the
Command User Interface are recognized by the
28F008SA With RP at GND the WSM is reset
and the Status Register is cleared
PRODUCT OVERVIEW
The 28F008SA is a high-performance
8-Mbit
(8 388 608 bit) memory organized as
1 Mbyte
(1 048 576 bytes) of 8 bits each
Sixteen 64-Kbyte
(65 536 byte)
blocks
are included on the 28F008SA
A memory map is shown in Figure 6 of this specifica-
tion A block erase operation erases one of the six-
teen blocks of memory in typically
1 6 seconds
in-
dependent of the remaining blocks Each block can
be independently erased and written
100 000 cy-
cles Erase Suspend
mode allows system software
to suspend block erase to read data or execute
code from any other block of the 28F008SA
The 28F008SA is available in the
40-lead TSOP
(Thin Small Outline Package 1 2 mm thick) and
44-
lead PSOP
(Plastic Small Outline) packages Pin-
outs are shown in Figures 2 and 4 of this specifica-
tion
The
Command User Interface
serves as the inter-
face between the microprocessor or microcontroller
and the internal operation of the 28F008SA
Byte Write and Block Erase Automation
allow
byte write and block erase operations to be execut-
ed using a two-write command sequence to the
Command User Interface The internal
Write State
Machine
(WSM) automatically executes the algo-
rithms and timings necessary for byte write and
block erase operations including verifications
thereby unburdening the microprocessor or micro-
controller Writing of memory data is performed in
byte increments typically within
9
ms
an 80% im-
provement over current flash memory products
I
PP
byte write and block erase currents
are
10 mA
typical 30 mA maximum V
PP
byte write and
block erase voltage
is
11 4V to 12 6V
2
INTEL [ INTEL CORPORATION ]
