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28F008C3 参数 Datasheet PDF下载

28F008C3图片预览
型号: 28F008C3
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT ADVANCED + BOOT BLOCK 8位, 16位, 32兆位闪存系列 [3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 59 页 / 380 K
品牌: INTEL [ INTEL CORPORATION ]
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E
1.0
3 VOLT ADVANCED+ BOOT BLOCK
INTRODUCTION
1.1
3 Volt Advanced+ Boot Block
Flash Memory Enhancements
This document contains the specifications for the
3 Volt Advanced+ Boot Block flash memory family.
These flash memories add features which can be
used to enhance the security of systems: instant
block locking and a protection register.
Throughout this document, the term “2.7 V” refers
to the full voltage range 2.7 V–3.6 V (except where
noted otherwise) and “V
PP
= 12 V” refers to 12 V
±5%. Sections 1 and 2 provide an overview of the
flash memory family including applications, pinouts,
pin descriptions and memory organization. Section
3 describes the operation of these products. Finally,
Section 4 contains the operating specifications.
The 3 Volt Advanced+ Boot Block flash memory
features:
Zero-latency, flexible block locking
128-bit Protection Register
Simple system implementation for 12 V
production programming with 2.7 V in-field
programming
Ultra-low power operation at 2.7 V
Minimum 100,000 block erase cycles
Common Flash Interface for software query of
device specs and features
Table 1. 3 Volt Advanced+ Boot Block Feature Summary
Feature
V
CC
Operating Voltage
V
PP
Voltage
V
CCQ
I/O Voltage
Bus Width
Speed (ns)
Blocking (top or bottom)
8-bit
8 M
(2)
16 M
32 M
(1)
2.7 V – 3.6 V
Provides complete write protection with
optional 12V Fast Programming
2.7 V– 3.6 V
16-bit
8 M
(2)
16 M
32 M
Reference
Table 8
Table 8
Note 3
Table 2
Table 11
Section 2.2
Appendix E and F
90, 110 @ 2.7 V and 80, 100 @ 3.0 V
8 x 8-Kbyte parameter
4-Mb: 7 x 64-Kbyte main
8-Mb: 15 x 64-Kbyte main
16-Mb: 31 x 64-Kbyte main
32-Mb: 63 x 64-Kbyte main
8 x 4-Kword parameter
4-Mb: 7 x 32-Kword main 8-
Mb: 15 x 32-Kword main
16-Mb: 31 x 32-Kword main
32-Mb: 63 x 32-Kword main
Operating Temperature
Program/Erase Cycling
Packages
Block Locking
Protection Register
Extended: –40 °C to +85 °C
100,000 cycles
40-Lead TSOP
(1)
48-Ball
µBGA*
CSP
(2)
48-Lead TSOP
48-Ball
µBGA*
CSP
(2)
Table 8
Table 8
Figures 1, 2, 3,
and 4
Section 3.3
Section 3.4
Flexible locking of any block with zero latency
64-bit unique device number, 64-bit user programmable
NOTES:
1. 32-Mbit density not available in 40-lead TSOP.
2. 8-Mbit density not available in µBGA* CSP.
3. V
CCQ
operation at 1.65 V — 2.5 V available upon request.
PRODUCT PREVIEW
5