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IN74HC03AN 参数 Datasheet PDF下载

IN74HC03AN图片预览
型号: IN74HC03AN
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入与非门与漏极开路输出高性能硅栅CMOS [Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS]
分类和应用: 栅极
文件页数/大小: 5 页 / 227 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
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IN74HC03A  
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
Parameter  
Unit  
ns  
25 °C  
to  
85°C 125°C  
-55°C  
tPLZ, tPZL Maximum Propagation Delay, Input A or B to  
Output Y (Figures 1 and 2)  
2.0  
4.5  
6.0  
120  
24  
150  
30  
180  
36  
20  
26  
31  
tTHL  
Maximum Output Transition Time, Any Output  
(Figures 1 and 2)  
2.0  
4.5  
6.0  
75  
15  
13  
95  
19  
16  
110  
22  
19  
ns  
CIN  
Maximum Input Capacitance  
-
-
10  
10  
10  
10  
10  
10  
pF  
pF  
COUT  
Maximum Three-State Output Capacitance  
(Output in High-Impedance State)  
Power Dissipation Capacitance (Per Gate)  
Typical @25°C,VCC=5.0 V  
CPD  
Used to determine the no-load dynamic power  
consumption:  
8.0  
pF  
PD=CPDVCC2f+ICCVCC  
.Figure 1. Switching Waveforms  
Figure 2. Test Circuit  
EXPANDED LOGIC DIAGRAM  
(1/4 of the Device)  
* Denotes open-drain outputs  
4