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AM188EM-20VIW 参数 Datasheet PDF下载

AM188EM-20VIW图片预览
型号: AM188EM-20VIW
PDF下载: 下载PDF文件 查看货源
内容描述: 8位/ 16位微控制器 [8-Bit/16-Bit Microcontrollers]
分类和应用: 微控制器
文件页数/大小: 146 页 / 1574 K
品牌: INNOVASIC [ INNOVASIC, INC ]
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IA186EM/IA188EM  
Data Sheet  
8-Bit/16-Bit Microcontrollers  
February 25, 2011  
2.2.5 aleAddress Latch Enable (synchronous output)  
This signal indicates the presence of an address on the address bus (ad15ad0 for the IA186EM  
or ao15ao8 and ad7ad0 for the IA188EM), which is guaranteed to be valid on the falling edge  
of ale.  
2.2.6 ardyAsynchronous Ready (level-sensitive asynchronous input)  
This asynchronous signal provides an indication to the microcontroller that the addressed I/O  
device or memory space will complete a data transfer. This active high signal is asynchronous  
with respect to clkouta and if the falling edge of ardy is not synchronized to clkouta, an  
additional clock cycle may be added  
Signal ardy should be tied high to maintain a permanent assertion of the ready condition. On the  
other hand, if the ardy signal is not used by the system it should be tied low, which passes  
control to the srdy signal.  
2.2.7 bhe_n/aden_n (IA186EM)Bus High Enable (synchronous output with  
tristate)/Address Enable (input with internal pull-up)  
The bhe_n and address bit ad0 or a0 inform the system which bytes of the data bus (upper, lower,  
or both) are involved in the current memory access bus cycle as shown Table 9.  
Table 9. Bus Cycle Types for bhe_n and ad0  
bhe_n ad0 Type of Bus Cycle  
0
0
1
1
0
1
0
1
Word Transfer  
High-Byte Transfer (Bits [158])  
Low-Byte Transfer (Bits [70])  
Refresh  
The bhe_n does not require latching and during bus hold and reset is tristated. It is asserted  
during t1 and remains so through t3 and tw.  
The high- and low-byte write enable functions of bhe_n and ad0 are performed by whb_n and  
wlb_n, respectively.  
When using the ad bus, DRAM refresh cycles are indicated by bhe_n/aden_n and ad0 both being  
high. During refresh cycles the a and ad busses may not have the same address during the  
address phase of the ad bus cycle necessitating the use of ad0 as a determinant for the refresh  
cycle rather than a0.  
An additional signal is used for Pseudo-Static RAM (PSRAM) refreshes (see mcs3_n/rfsh_n pin  
description).  
There is a weak internal pull-up on bhe_n/aden_n obviating the need for an external pull-up and  
reducing power consumption.  
®
IA211050831-19  
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http://www.Innovasic.com  
Customer Support:  
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