SMBT3906/ MMBT3906
PNP Silicon Switching Transistor
•
High DC current gain: 0.1 mA to 100 mA
•
Low collector-emitter saturation voltage
•
Complementary type:
SMBT3904/ MMBT3904 (NPN)
3
2
1
VPS05161
Type
SMBT3906/ MMBT3906
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1For calculation of
R
Marking
s2A
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
40
40
5
200
330
150
-65 ... 150
Value
≤
240
Unit
V
mA
mW
°C
Unit
K/W
thJA
please refer to Application Note Thermal Resistance
1
Jul-28-2003
INFINEON [ INFINEON TECHNOLOGIES AG ]
