SMBT3904...MMBT3904
NPN Silicon Switching Transistors
•
High DC current gain: 0.1 mA to 100 mA
•
Low collector-emitter saturation voltage
•
For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
•
Complementary types: SMBT3906... MMBT3906
•
SMBT3904S: For orientation in reel
see package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Type
SMBT3904/MMBT3904
SMBT3904S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
Marking
s1A
s1A
1=B
Pin Configuration
2=E
3=C
-
-
-
Package
SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
Value
40
60
6
200
330
250
Unit
V
mA
mV
T
S
≤
71°C, SOT23, SMBT3904
T
S
≤
115°C, SOT363, SMBT3904S
Junction temperature
Storage temperature
Thermal Resistance
Parameter
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
140
°C
Junction - soldering point
1)
SMBT3904/MMBT3904
SMBT3904S
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2012-08-21
INFINEON [ INFINEON TECHNOLOGIES AG ]
