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MMBT2222A 参数 Datasheet PDF下载

MMBT2222A图片预览
型号: MMBT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅开关晶体管低集电极 - 发射极饱和电压 [NPN Silicon Switching Transistor Low collector-emitter saturation voltage]
分类和应用: 晶体开关晶体管光电二极管IOT
文件页数/大小: 8 页 / 83 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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SMBT2222A/MMBT2222A
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
40
V
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
75
6
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 60 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.01
10
10
nA
-
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 µA,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 1 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
35
50
75
50
100
40
V
CEsat
-
-
-
-
-
-
-
-
-
-
300
-
V
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
-
-
V
BEsat
-
-
-
-
0.3
1
1.2
2
Base emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
1
Pulse
0.6
-
test: t < 300µs; D < 2%
2
2007-04-19