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MMBT2222A 参数 Datasheet PDF下载

MMBT2222A图片预览
型号: MMBT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN开关晶体管 [NPN Silicon Switching Transistor]
分类和应用: 晶体开关晶体管光电二极管IOT
文件页数/大小: 6 页 / 214 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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SMBT2222A/ MMBT2222A
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain 1)
I
C
= 100 µA,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 1 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V,
T
A
= 55°C
Collector-emitter saturation voltage1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage 1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat
0.6
-
-
-
1.2
2
V
CEsat
-
-
-
-
0.3
1
h
FE
35
50
75
50
100
40
35
-
-
-
-
-
-
-
-
-
-
-
300
-
-
V
-
I
EBO
-
-
10
nA
I
CBO
-
-
10
µA
I
CBO
-
-
10
nA
V
(BR)EBO
6
-
-
V
(BR)CBO
75
-
-
V
(BR)CEO
40
-
-
V
typ.
max.
Unit
1) Pulse test: t
≤=
300
µ
s, D = 2%
2
Feb-18-2002