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MCT6 参数 Datasheet PDF下载

MCT6图片预览
型号: MCT6
PDF下载: 下载PDF文件 查看货源
内容描述: 双光电晶体管光耦合器 [DUAL PHOTOTRANSISTOR OPTOCOUPLER]
分类和应用: 晶体光电晶体管光电晶体管
文件页数/大小: 3 页 / 57 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号MCT6的Datasheet PDF文件第2页浏览型号MCT6的Datasheet PDF文件第3页  
MCT6
DUAL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Current Transfer Ratio, 20% Minimum
• Two Isolated Channels Per Package
• Isolation Text Voltage, 5300 VAC
RMS
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 1
DESCRIPTION
The MCT6 is an industry standard dual optocoupler
consisting of a Gallium Arsenide infrared LED and a
silicon phototransistor. The MCT6 is constructed
with a high voltage insulation, double molded pack-
aging process which offers 5300 VAC
RMS
isolation
test capability.
Maximum Ratings
Emitter (each channel)
Reverse Voltage................................................. 3 V
Continuous Forward Current......................... 60 mA
Power Dissipation at 25
°
C Ambient........... 100 mW
Derate Linearly from 25
°
C ..................... 1.3 mW/
°
C
Detector (each channel)
Collector-Emitter Breakdown Voltage ............... 30V
Emitter-Collector Breakdown Voltage ................. 6V
Power Dissipation at 25
°
C Ambient........... 150 mW
Derate Linearly from 25
°
C ........................ 2 mW/
°
C
Package
Total Package Dissipation
at 25
°
C (LED + Detector). ..................... 400 mW
Derate Linearly from 25
°
C ................... 5.33 mW/
°
C
Storage Temperature .................. –55
°
C to +150
°
C
Operating Temperature ............... –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ....................10 sec.
Isolation Test Voltage ....................... 5300 VAC
RMS
Pollution Degree (DIN VDE 0110) ......................... 2
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ..........................R
IO
=10
12
V
IO
=500 V, T
A
=100
°
C ........................R
IO
=10
11
10
°
Typ.
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Dimensions in inches (mm)
4
3
2
1
Pin One I.D
Anode 1
8 Emitter
7 Collector
6 Collector
5 Emitter
.268 (6.81)
.255 (6.48)
5
6
7
8
Cathode 2
Cathode 3
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
Anode 4
.150 (3.81)
.130 (3.30)
.305
(7.75) Typ.
4° Typ.
.022 (.56)
.018 (.46)
Electrical Characteristics (T
A
=25
°
C)
Symbol
Emitter
Forward Voltage
Reverse Current
Junction Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Package
DC Current
Transfer Ratio
Saturation Voltage,
Collector-Emitter
Switching Times
%
CTR
DC
V
CEsat
t
on
t
off
3
Min.
Typ.
Max.
Unit
Condition
V
F
I
R
C
J
1.1
1.5
10
V
µ
A
pF
I
F
=20 mA
V
R
=3 V
V
F
=0 V,
f=1 MHz
25
BV
CEO
BV
ECO
30
6
V
V
I
C
=10
µ
A,
I
F
=0 mA
I
E
=10
µ
A,
I
F
=0 mA
20
50
V
0.4
µ
s
µ
s
V
CE
=10 V,
I
F
=10 mA
I
CE
=2 mA,
I
F
=16 mA
R
E
=100
,
V
CE
=10 V
I
C
=2 mA
15
5–1