END OF LIFE
PD – 96114C
IRF7805QPbF
l
l
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Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
SO-8
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
These HEXFET
®
Power MOSFET's in package utilize
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramatically reduce board space and is also available
in Tape & Reel.
Package
Type
SO-8
SO-8
Standard Pack
Form
Tape and Reel
Tube
Quantity
4000
95
EOL
Notice
EOL 527
EOL 529
T o p V ie w
Device Features
IRF7805Q
V
DS
30V
R
DS(on)
11mΩ
Qg
31nC
Qsw
11.5nC
Qoss
36nC
Base part number Orderable part number
IRF7805QPbF
Replacement Part Number
IRF7805QPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
e
Power Dissipation
e
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
Junction-to-Drain Lead
g
Junction-to-Ambient
eg
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
08/19/14
INFINEON [ INFINEON TECHNOLOGIES AG ]
