IRF7805TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
30
–––
1.0
––– –––
––– –––
––– –––
V
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
9.2
11
m
V
–––
3.0
70
10
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA VDS = 24V, VGS = 0V
––– ––– 150
––– ––– 100
––– ––– -100
VDS = 24V,VGS = 0V,TJ = 100°C
VGS = 12V
VGS = -12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
nC
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Pre -Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
0.5
–––
–––
–––
–––
22
3.7
1.4
6.8
31
Qgs1
Qgs2
Qgd
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
–––
–––
–––
VGS = 5.0V
VDS = 16V
ID = 7.0A
8.2 11.5
30
–––
16
20
38
36
1.7
–––
–––
–––
–––
nC VDS = 16V, VGS = 0V
VDD = 16V,VGS = 4.5V
ID = 7.0A
RG = 2
Resistive Load
ns
Turn-Off Delay Time
Fall Time
16
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– ––– 2.5
––– ––– 106
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 7.0A,VGS = 0V
Continuous Source Current
(Body Diode)
IS
A
V
Pulsed Source Current
(Body Diode)
ISM
VSD
Diode Forward Voltage
––– –––
1.2
di/dt = 700A/µs
VDS =16V, VGS= 0V, IS= 7.0A
Qrr
Qrr
Reverse Recovery Charge
Reverse Recovery Charge
–––
–––
88
55
–––
nC
di/dt = 700A/µs (with 10BQ040)
VDS =16V, VGS= 0V, IS= 7.0A
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - QOSS
R is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
2
2016-08-23
INFINEON [ Infineon ]
