5500
5000
4500
6
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
I
D
=
-11.5A
V
DS
=-9.6V
V
DS
=-6V
5
C, Capacitance(pF)
4000
3500
3000
2500
2000
1500
1000
500
0
1
Ciss
Coss = Cds + Cgd
4
3
Coss
Crss
2
1
0
10
100
0
10
20
30
40
50
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
10
100
100us
T
J
= 150
°
C
1
T
J
= 25
°
C
10
1ms
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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