PD - 95137A
IRF7416PbF
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Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -30V
R
DS(on)
= 0.02Ω
6
5
Description
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
V/ns
°C
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Max.
50
Units
°C/W
www.irf.com
1
06/29/11
INFINEON [ INFINEON TECHNOLOGIES AG ]
