PD - 96249
IRF7413ZGPbF
HEXFET
®
Power MOSFET
Applications
l
Control FET for Notebook Processor
Power
l
Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Benefits
l
l
l
l
l
l
V
DSS
30V
R
DS(on)
max
10m @V
GS
= 10V
A
A
D
D
D
D
:
I
D
13A
S
S
S
G
1
2
3
4
8
7
6
5
Ultra-Low Gate Impedance
Very Low R
DS(on)
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free
Halogen-Free
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
f
Notes
through
are on page 10
www.irf.com
1
07/10/09
INFINEON [ INFINEON TECHNOLOGIES AG ]
