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IRF7404TRPBF-1 参数 Datasheet PDF下载

IRF7404TRPBF-1图片预览
型号: IRF7404TRPBF-1
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET,]
分类和应用:
文件页数/大小: 10 页 / 234 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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IRF7404TRPbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
0.04
50
-6.7
V
Ω
nC
A
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
Q
g
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7404PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7404TRPbF-1
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
Max.
-7.7
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
50
Units
°C/W
1
©
2014 International Rectifier
October 16, 2014