7000
6000
5000
4000
3000
2000
1000
0
1
10
100
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
-VGS, Gate-to-Source Voltage (V)
ID= -42A
16
C, Capacitance (pF)
VDS = -44V
VDS= -28V
VDS= -11V
Ciss
12
8
Coss
4
Crss
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
TJ = 150°C
10.0
100
1msec
100µsec
10msec
10
LIMITED BY PACKAGE
1.0
TJ = 25°C
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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