PD - 95466A
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
HEXFET
®
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 18mΩ
I
D
= 59A
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
TO-220AB
D
2
Pak
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Max.
59
42
240
160
1.1
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
W
W/°C
V
mJ
A
mJ
°C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.92
–––
62
40
Units
°C/W
j
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
07/23/10
INFINEON [ INFINEON TECHNOLOGIES AG ]
