IPD15N06S2L-64
OptiMOS
®
Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
•
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
64
19
V
mΩ
A
PG-TO252-3-11
Type
IPD15N06S2L-64
Package
PG-TO252-3-11
Marking
2N06L64
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
1)
Pulsed drain current
1)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=15A
Value
19
13
76
43
±20
47
-55 ... +175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 1.0
page 1
2006-07-18