IKW75N60T
q
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
due to diode recovery
Ets*
Ets*
8.0mJ
6.0mJ
4.0mJ
2.0mJ
0.0mJ
12.0mJ
8.0mJ
4.0mJ
0.0mJ
Eon*
Eon
*
Eoff
Eoff
0A 20A 40A 60A 80A 100A 120A 140A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 5Ω,
Dynamic test circuit in Figure E)
VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery
due to diode recovery
8mJ
Ets*
5.0mJ
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
Eon
*
6mJ
4mJ
2mJ
0mJ
Ets*
Eoff
Eoff
Eon*
25°C
50°C
75°C 100°C 125°C 150°C
300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, rG = 5Ω,
Dynamic test circuit in Figure E)
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 75A, rG = 5Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.8 2013-12-05
IFAG IPC TD VLS
INFINEON [ Infineon ]
