DF8MR12W1M1HF_B67
™
EasyPACK module
6 Inverse-polarity protection diode
Table 10
(continued) Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Maximum RMS forward
current per chip
IFRMSM TH = 80 °C
50
A
Maximum RMS current at
rectifier output
IRMSM TH = 80 °C
50
A
A
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
450
360
I2t - value
1010
648
A²s
Table 11
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
0.95
0.1
Unit
Min.
Max.
Forward voltage
Reverse current
VF
Ir
IF = 30 A
Tvj = 150 °C
V
Tvj = 150 °C, VR = 1200 V
per diode
mA
K/W
Thermal resistance,
junction to heat sink
RthJH
1.29
Temperature under
switching conditions
Tvj, op
-40
150
°C
6
Inverse-polarity protection diode
Table 12
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Maximum RMS forward
current per chip
IFRMSM TH = 80 °C
IRMSM TH = 80 °C
50
50
A
A
A
Maximum RMS current at
rectifier output
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
450
360
I2t - value
1010
648
A²s
Datasheet
7
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
