DF8MR12W1M1HF_B67
™
EasyPACK module
3 Body diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
60.7
Unit
Min.
Max.
Tuꢀn-off delay time
td off
ID = 50 A, RGoff = 2 Ω,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
ns
(inductive load)
VDD = 600 V, VGS = -3/18 V
60.7
60.7
Fall time (inductive load)
tf
ID = 50 A, RGoff = 2 Ω,
VDD = 600 V, VGS = -3/18 V
10.5
ns
10.5
10.5
Turn-on energy loss per
pulse
Eon
ID = 50 A, VDD = 600 V,
0.516
0.516
0.516
0.133
0.133
0.133
1.1
mJ
mJ
L = 35 nH, VGS = -3/18 V,
σ
RGon = 3.3 Ω, di/dt = 4.29
kA/µs (Tvj = 175 °C)
Tuꢀn-off energy loss per
pulse
Eoff
ID = 50 A, VDD = 600 V,
L = 35 nH, VGS = -3/18 V,
σ
RGoff = 2 Ω, dv/dt = 45.7
kV/µs (Tvj = 175 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per MOSFET
K/W
°C
Temperature under
switching conditions
-40
175
Note:
The selection of positive and negative gate-source voltages impacts losses and the long-term behavior
of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN
2021-13 must be considered to ensure sound operation of the device over the planned lifetime.
Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed
specifications, please refer to AN 2021-13.
3
Body diode
Table 6
Maximum rated values
Parameter
Symbol Note or test condition
ISD Tvj = 175 °C, VGS = -3 V
Values
Unit
DC body diode forward
current
TH = 65 °C
24
A
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
4.2
Unit
Min.
Max.
Forward voltage
VSD
ISD = 50 A, VGS = -3 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
5.35
V
3.9
3.8
Datasheet
5
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
