DF8MR12W1M1HF_B67
™
EasyPACK module
2 MOSFET
Table 4
Recommended values
Parameter
Symbol Note or test condition
Values
15...18
-5...0
Unit
On-state gate voltage
Off-state gate voltage
VGS(on)
VGS(off)
V
V
Table 5
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
Unit
Min.
Max.
Drain-source on-resistance RDS(on) ID = 50 A
VGS = 18 V,
Tvj = 25 °C
16.2
mΩ
VGS = 18 V,
Tvj = 125 °C
26.1
34.7
19.4
4.3
VGS = 18 V,
Tvj = 175 °C
VGS = 15 V,
Tvj = 25 °C
Gate threshold voltage
VGS(th) ID = 20 mA, VDS = VGS, Tvj = 25 °C, (tested afeꢀ 3.45
5.15
V
1ms pulse at VGS = +20 V)
Total gate charge
Internal gate resistor
Input capacitance
QG
RGint
CISS
VDD = 800 V, VGS = -3/18 V
Tvj = 25 °C
0.149
4.1
µC
Ω
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
4.4
nF
Output capacitance
COSS
Crss
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
0.21
nF
nF
Reverse transfer
capacitance
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
0.014
COSS stored energy
EOSS
IDSS
VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C
86
µJ
µA
Drain-source leakage
current
VDS = 1200 V, VGS = -3 V
Tvj = 25 °C
0.03
210
400
Gate-source leakage
current
IGSS
VDS = 0 V, Tvj = 25 °C
VGS = 20 V
nA
ns
Turn-on delay time
(inductive load)
td on
ID = 50 A, RGon = 3.3 Ω,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
32
32
VDD = 600 V, VGS = -3/18 V
32
Rise time (inductive load)
tr
ID = 50 A, RGon = 3.3 Ω,
VDD = 600 V, VGS = -3/18 V
23.9
23.9
23.9
ns
(table continues...)
Datasheet
4
Revision 0.10
2022-11-21
INFINEON [ Infineon ]
