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DF8MR12W1M1HF_B67 参数 Datasheet PDF下载

DF8MR12W1M1HF_B67图片预览
型号: DF8MR12W1M1HF_B67
PDF下载: 下载PDF文件 查看货源
内容描述: [PressFIT]
分类和应用:
文件页数/大小: 20 页 / 809 K
品牌: INFINEON [ Infineon ]
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DF8MR12W1M1HF_B67  
EasyPACK module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
3.0  
Unit  
Isolation test voltage  
Internal isolation  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
> 200  
Comparative tracking  
index  
CTI  
RTI  
Relative thermal index  
(electrical)  
housing  
140  
°C  
Table 2  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
10  
Unit  
Min.  
Max.  
Stray inductance module  
LsCE  
nH  
Module lead resistance,  
terminals - chip  
RAA'+CC' TH = 25 °C, per switch  
3
mΩ  
Module lead resistance,  
terminals - chip  
RCC'+EE' TH = 25 °C, per switch  
2
mΩ  
Storage temperature  
Mounting force per clamp  
Weight  
Tstg  
F
-40  
20  
125  
50  
°C  
N
g
G
24  
Note:  
The current under continuous operation is limited to 25 A rms per connector pin.  
2
MOSFET  
Table 3  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
1200  
50  
Unit  
Drain-source voltage  
VDSS  
IDN  
Tvj = 25 °C  
TH = 65 °C  
V
A
A
Implemented drain current  
Continuous DC drain  
current  
IDDC  
Tvj = 175 °C, VGS = 18 V  
45  
Repetitive peak drain  
current  
IDRM  
VGS  
VGS  
verified by design, tp limited by Tvjmax  
100  
A
V
V
Gate-source voltage, max.  
transient voltage  
D < 0.01  
-10/23  
-7/20  
Gate-source voltage, max.  
static voltage  
Datasheet  
3
Revision 0.10  
2022-11-21  
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